[Abstract]

Over the past decades, developing high-performance transparent p-type semiconductors has become one of the urgent tasks in electronic industry for the integration of complementary circuits and high-end displays. Unfortunately, there is no satisfied candidate reported to date. In this work, we reported a novel transparent p-type Zn-doped CuI semiconductor using low-temperature and low-cost solution process for high-performance transistors and circuits. The optimized transistors exhibited a high hole mobility of 5 cm2 V−1 s−1 and high on/off current ratio of ~107 with excellent operational stability and reproducibility. The integrated CMOS inverter delivered a high peak gain of ~60 with the low power consumption. This study paves the way for realizing transparent, flexible, and large-area integrated circuits with n-type metal-oxide semiconductors.